Abstract
Changes in the average brightness, non-uniformity and color channel intensity (include R, G and B) of dark output images and natural light image is analyzed. These parameters was captured by the running Complementary Metal Oxide Semiconductor (CMOS) image sensors which exposed in low dose rate environment at 1000Gy/h, 5Gy/h, 15Gy/h and 30Gy/h. Average brightness and non-uniformity increase sharply with an increasing dose and reaches to an equilibrium. The steady region reaches faster with the dose rate increase. Hot pixels appears due to excess radiation generated electrons move into the potential well of the photodiode and become signal current. Color cast is also induced by γ-ray irradiation due to the surface recombination velocity change and the color centers introduced in pixel material. CIS (CMOS Image Sensors) samples destroyed when expose to high dose rate at 1000Gy/h immediately, but still function when exposed to low dose rate of γ-ray irradiation at 5Gy/h, 15Gy/h and 30Gy/h. A possible experiment is presented.
