Abstract
Raman imaging was carried out to measure strain mapping at around indented Si surfaces. Two or three Raman peaks of Si were observed at swells around the triangular indentation dimple made by Berkovich type indenter. On the other hand, single Raman peak with high Raman shift was observed at the center of indentation. Raman shift images of the indentation reveals that there are compressive strain at the center of dimple and tensile strain at the swelled surroundings. The peak separation is induced by biaxial or triaxial stresses during the indentation process. Calculated strain images using FEM (Finite Element Method) showed good agreement with the experimental results.
