Abstract
We developed a pattern shape control technique of wet etching Patterned Sapphire Substrate(PSS) by applying Chemical Mechanical Polishing (CMP).We evaluated Round Rate(RR) as a degree of pattern roundness.RR increased with increasing the concentration of colloidal silica,but above 1% concentration of colloidal silica,RR abruptly decreased.The higher applied pressure caused not only higher RR but also reduction of pattern height,which indicates that lower pressure is appropriate for pattern shape control
