I-2-2 Proposal of a highly efficient precision processing for diamond and nitride substrate : process for manufacturing ultimate semiconductor device

Abstract

The near-future process of semiconductor wafer planarization for hard-to-process wide bandgap semiconductor,such as gallium nitride (GaN),silicon carbide (SiC), and semiconductor diamond which isthought to be the ultimate semiconductor material is proposed.The process is divided into two steps.First,the bulk material is processed by femtosecond laser,results in the pseudo-radical state over the surface.Next,theprocessed specimen is introduced to the novel CMP machine,which is merged together with plasma CVM apparatus.This study we introduce the polishing process and concepts in the new planarization process, and report some results of the preliminary experiments.