Abstract
Si nano wire piezoresistor, whose minimum cross-sectional area is 53nm x 53nm, was fabricated by combination of electron beam (EB) direct writing and RIE. In order to confirm an ability of the Si nano wire piezoresistor as a sensing element of mechanical sensor, the piezoresistive effect was investigated. Longitudinal piezoresistive coefficient π_<l[011]> of the nano wire piezoresistor increased, while transverse piezoresistive coefficient π_<t[01^^-1]>^- decreased with decreasing the cross-sectional area. The maximum value of the longitudinal piezoresistive coefficient π_<l[011]> was 48 x 10^<-5> (1/MPa) at impurity concentration of 5 x 10^<19> (cm^<-3>).
