Influence of Frequency of RF Power on Decomposition of Semiconductor Processing Gas using Inductively Coupled Plasma at low Pressure

Abstract

CF_4 is one of the most stable gases among semiconductor processing gases and their decomposition is extremely difficult. Influence of frequency of radio frequency (RF) power on decomposition of CF_4 using inductively coupled plasma (ICP) reactor at low pressure was investigated. The frequency of RF power supply is 2MHz or 4MHz. With each frequency, complete decomposition can be obtained with certain operately conditions of ICP such as the total flow rate, the ratio of CF_4 to O_2,and RF power. The detailed discussion is presented in this paper.