Abstract
The material removal phenomenon in CMP process is not clarified yet. Therefore, the appropriate material removal model has not established. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed and material removal mechanism was investigated. At first, the property of SiO_2 film in solution was investigated with AFM indentation. Next, the AFM tip after indentation was observed with SEM-EDX system. In pH7〜pH 10 solution, SiO_2 film changed to soft material, and small adherent which was SiO_2 was observed in pH7 solution. This fact suggests that fine particles in slurry adhere materials from SiO_2 film with chemical adherent force.
