The Proceedings of Conference of Kanto Branch
Online ISSN : 2424-2691
ISSN-L : 2424-2691
2011.17
Session ID : 117303
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117303 Fracture Toughness on Cleavage Plane of Single Crystal Silicon Wafer
Satoshi SUTOMasayoshi MIYASAKAJunichi SHIBUGUCHIMasayoshi TATENO
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Abstract
This paper provides effects of specimen's thickness on fracture toughness (critical stress intensity factor, K_<IC>) on the major planes of single crystal silicon using controlled surface flaw (CSF) method at room temperature. In this study, effects of geometrical shape of precrack on fracture stress and fracture toughness each specimen thickness. The average of K_<IC> obtained by CSF method was found to be 0.708±0.129 MPa・m^<0.5>, independent of specimen's thickness. The results on fracture stress and fracture toughness contribute to design for micro structures.
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© 2011 The Japan Society of Mechanical Engineers
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