10111 Droplet evaporation model on various film surface of Si wafers

Abstract

The droplet evaporation process was categorized into two types, i.e. constant contact radius (CCR) and constant contact angle (CCA) types. The present study was aimed to construct the mathematical model to describe the droplet evaporation phenomena for CCR and CCA types. The mathematical model was developed by considering evaporation phenomena at the droplet edge. The change of droplet volumes predicted by the mathematical model were compared with the experimental data of droplet evaporation of Cu, Low-k, and Th-Ox wafers. As a result, it was confirmed that the result of developed model was in agreement with the experimental data.