Abstract
The conventional defects inspection technology can't apply to an inspection technique of patterned wafers for the next generation semiconductors, because of physical limits imposed by the wavelength of incident beam. So, we attend to particles existing on the patterned wafer that particularly affects the yield and propose new optical detection for evaluating the nano-particles by using evanescent light based on near field optics. In this paper, to verify the feasibility of this proposed method, computer simulation was performed by means of FDTD method based on Maxwell's equations. The results show that the proposed method is effective for detecting particle (100nm in a diameter) on patterned wafer of 100nm lines and spaces.
