Abstract
In the semiconductor industry processing and measurement of silicon wafers in the nanometer order are required. Moreover, larger and thinner precise glass substrates are in demand for the purpose of enlargement and weight reducing of FPD. However, the accurate shape measurement of thin-large panels is difficult because of the vibration and deflection due to gravity and clamping forces. In this study, error factors and repeatability in the shape measurement of thin-large panels is investigated using the three-point-support inversion method.