Abstract
To achieve rapid patterning of quartz surface, ion beam irradiation using focused ion beam (FIB) and succeeding buffered hydrofluoric acid wet etching of quartz was examined. The etched depths of quartz saturated with increasing of ion dose and the optimum wet etching time was 60s. This process improved surface roughness and fabricated a 34nm depth and 487nm width line pattern using 330nm diameter FIB irradiation.