Abstract
Mid-UV pulsed solid-state laser micromachining on SiC single crystal wafer have been investigated symmetrically. SiC single crystal wafer is used in MEMS at harsh environment. Cutting, marking and surface ablation of SiC single crystal wafer have been produced by direct writing. Laser ablation results including ablation threshold and ablation rate are discussed. The results show that ablation rate of mid-UV pulsed solid-state laser micromachining depends on several factors, including laser pulse energy, beam feed rate (cutting speed), and number of laser scan. The results indicates that the laser ablation process of SiC single crystal wafer could be a mixed of photothermal and photochemical process. The mid-UV laser micromachining process appears to be dominated by photothermal process.
