Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : November 14, 2021 - November 18, 2021
For future device development of graphene, the energy dissipation on micro-scale graphene circuit should be observed and analyzed. In order to obtain the temperature distribution on micro-scale graphene circuit, passive terahertz scattering near-field optical microscope (passive s-SNOM) is utilized. To confirm the size-dependence of near field signal on current stimulated graphene circuits and analyzing the energy dissipation, several types of graphene samples should be fabricated. In this paper, we created the several graphene circuits for measuring the temperature distribution by the passive s-SNOM. We checked each fabrication procedures of graphene samples and proposed the most appropriate method for further experiments.