Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : December 05, 2022 - December 06, 2022
A magnetron sputtering device was prototyped for forming a thin film from the entire circumference of a rod-shaped substrate, which was placed coaxially in the inner space of a cylindrical sputtering target. The deposition rate of TiN by employing the coaxial sputtering was as slow as 1.33 μm/h when DC discharge was used, and the deposition rate required for small-volume, ultra-high-speed deposition technology was not obtained. Therefore, we came up with the idea of realizing ultra-high-speed deposition with the coaxial sputtering by reducing target-substrate distance, and as a first step, we investigated the relationship between the target-substrate distance and the deposition rate using a planar magnetron sputtering device. As a result, the deposition rate of Ti thin film exceeded 50 μm/h at a target-substrate distance of 10 mm. It was suggested that decreasing target-substrate distance could provide a deposition rate required for low-volume, ultra-high-speed deposition technology.
