Abstract
We have fabricated the high aspect ratio X-ray grating for X-ray phase imaging. In past study, we used X-ray lithography technique. However, it is very high cost to obtain the high aspect ratio X-ray grating. In this research, we discuss the new fabrication process of X-ray grating using ICP-RTE technique. Si dry etching technology makes it possible to fabricate high aspect ratio rectangular structures by repeating two steps of etching process and protection process. Therefore, our research introduces the ability of Si dry etching technology in order to fabricate un-tapered, high precision Si microstructures containing rectangular patterns. Au absorbing part for the X-ray grating was formed by electroforming. In order to obtain the high aspect ratio structure, Au electroforming was realized from the bottom of the structure groove. These resulted in the successful formation, about 20 .tm thick, void-free Au film in a space as narrow as 2.6 I..tm in large effective area of 60 mm squares.
