Abstract
In this study, we analyzed the temperature dependence of mechanical properties of the parallel-plate vibrating-body field-effect transistor (VB-FET), which integrated FET into parallel plate oscillator. The parallel-plate VB-FET has a movable plate of the channel and a fixed plate of the gate. The temperature of the parallel-plate VB-FET rises the through the joule heating at the channel of the MOSFET. Thought the electrical property change by temperature rise has been studied in detail, the mechanical property change by the joule heating is a new issue for the VB-FET. Therefore, we evaluated the influence of the temperature rise using the thermal equivalent circuit of the parallel-plate VB-FET Figure 1 shows the analytical model of the parallel-plate VB-FET. We assumed thermal resistances (R1, R2, R3, R4, and R5) corresponding to the VB-FET structure. And the joule heating was represented by a current source connecting at the channel. Using the thermal equivalent circuit, we calculated the temperature rise under several conditions in joule heating. From the temperature rise at the spring structure of the VB-FET, we evaluated Young's modulus change of Si. As a result, we estimated the resonance frequency shift caused by the temperature rise of the channel. Some important parameters are presented and discussed.
