Abstract
To improve the delamination strength of SiC film, nano- and micro-wire were formed on surface of tool steel (JIS: SKH51) substrate by plasma discharging method proposed by the authors. Before sputter coating of SiC film, plasma discharging was carried out under Ar and H_2 environment, and the delamination energy of the SiC film was measured using micro-edge indent method. The result showed that nano- and micro-wire were formed on the surface of the substrate and the height, diameter of the wire and density could be controlled by varying discharging condition. The delamination energy of the SiC film was influenced by distance of indentation point from edge, and higher delamination energy than those without nano- or micro-wire was obtained when the distance of indentation point from edge was small.
