Abstract
Market trend of GaN-based white LEDs and RF HFET is surveyed. Key points for the future white light source for general lighting and high power electron devices are discussed. Advantage of using high-quality GaN substrates grown by Na flux method on the performance of high-current density operation LEDs and also high power electron devices will be shown. Also, merit of using high-density nitrogen radical source on the growth of thick InGaN by plasma-assisted (PA-) molecular beam epitaxy (MBE) is presented.
