Performance deterioration behavior of printed organic semiconductor flexible micro transistor under repeated bending deformation

Abstract

A novel bending test technique⁽¹⁾ was applied to a micro-scale transistor device fabricated with an organic semiconductor printed on a flexible substrate. I-V behavior (drain current vs. gate voltage) was obtained while applying gradually increasing level of bending deformation to the device. As shown in Fig.1, it was observed that on-state current rather increased up to a certain level of bending and that it decreased with further severer level. More details of the device behavior and its characterization are discussed in the presentation, including the performance change under repeated loading. References