Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : September 13, 2020 - September 16, 2020
Next-generation power semiconductors using GaN and SiC are expected to be mounted on the power modules used in high-temperature environments over 200°C. Since ordinary lead-free solders and high-melting point solders containing harmful lead cannot be used for the mounting, some new bonding technique is needed to achieve that. Cu3Sn sinter bonding has attracted attention as the technique. To employ it for the semiconductors mounting, the strength reliability of Cu3Sn must be investigated firstly. Especially, the strength at high temperature must be clarified. In this study, we propose a test method for evaluating the tensile properties of Cu3Sn at high temperature. The method employs a Cu wire specimen having Cu3Sn layer. Using this specimen and normal Cu wire specimen, we conducted tensile tests both at room temperature and 200°C. The stress-strain relations obtained from those tests were applied to rule of mixture to estimate the stress-strain relation of Cu3Sn at each temperature.
