Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : September 03, 2023 - September 06, 2023
Fast atomic beam sources used for surface-activated bonding need to uniformly irradiate a large area. In conventional methods, the irradiation characteristics of such a fast atom beam source must be improved through trial-and-error modifications of the beam aperture arrangement, among other techniques, and by conducting silicon oxide film removal experiments and verification, all of which are inefficient. In this study, we employed the PIC-MCC and DSMC plasma simulation methods to acquire the Ar flux and incident energy distributions on the wafer surface. These distributions predict the amount of oxide film removal caused by the fast atomic beam, and based on them, we constructed a model that predicts the distribution of the amount of film removed. Subsequently, we validated of the prediction model by conducting silicon oxide film removal experiments and obtaining the distributions of the amount of film removed.
