Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : September 03, 2023 - September 06, 2023
In this presentation, a new method for active control of the strength of SiO2 film using Si nanodots (Si-NDs) is proposed. An electron beam (EB) irradiation creates Si-NDs in an SiO2 film. The number, size, and distribution of the Si-NDs in the film can be controlled by EB irradiation energy. Since Si has higher fracture toughness than SiO2, a crack, initiated in SiO2, propagates into the film while preventing Si-NDs during fracture. Consequently, the fracture of SiO2 film can be controlled by Si-NDs, leading to active control of strength for SiO2-coated Si microelectromechanical systems (MEMS).
