Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : September 08, 2024 - September 11, 2024
Surface activated bonding (SAB) is a technique that involves irradiating surfaces with an inert gas as a fast atom beam (FAB) in a vacuum to remove oxide films and adsorption layers, thereby activating the surfaces and enabling bonding at low pressure. This technique allows for the bonding of dissimilar materials and piezoelectric crystals. Recent research has developed an evaluation method for the irradiation performance of FAB sources using plasma simulation to enhance the irradiation performance for large-diameter Si wafers. However, this method is only applicable when the FAB source is directly facing the wafer, necessitating an investigation into the effects of oblique placement in actual bonding scenarios. In this study, simulations and experiments were conducted to investigate the effects of oblique placement.
