Abstract
Relation between pore formation and hardness of Al thin film sputtered on Si substrate is investigated by molecular dynamics simulations. Vacancy ratio and size introduced in thin films are varied and these effects to hardness are discussed. Effects to packing ratio and residual stress are also investigated. As vacancy ratio is increased, Both packing ratio and compressive stress which exist in the film without vacancy are decreased. As for hardness, films are softened because of the decrease of residual compressive stress. However, it is also implied that distribution and size of pore also influence film hardness. These results qualitatively agree with experimental results.
