The proceedings of the JSME annual meeting
Online ISSN : 2433-1325
2002.5
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Electric field enhanced growth of Carbon nanotube and its application to SPM
Hidetoshi MiyashitaTakahito OnoMasayoshi Esashi
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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 295-296

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Abstract
It is found that the application of negative substrate bias enhances the growth of the carbon nanotubes in hot-filament chemical vapor deposition. This growth enhancement effect is applied to synthesize an individual carbon nanotube on the apex of silicon tip scanning probe microscopy. The silicon tip of the probe for the scanning probe microscopy is coated with 5nm tick thin film by spattering. Carbon nanotube is grown on the top of the tip by the deposition under the sample bias of -300V. It is demonstrated that the silicon probe grown a carbon nanotube exhibits a high resolution in SPM imaging. Similar experiments are performed on faced silicon electrodes with a narrow gap where a voltage of 30V is applied between the electrodes during the growth. Carbon nanotube grown from negatively biased electrode forms a freestanding bridge structure between the electrodes.
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© 2002 The Japan Society of Mechanical Engineers
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