Abstract
A FAB (Fast Atom Beam) manufacturing is able to make a high-aspect-ratio structure. The manufacturing precision of the line-and-space does not decrease largely in the case of the FAB manufacturing, when the distance between the mask and the substrate is situated in a limited length. In the present paper, first, a new method to make a line-and-space on the substrate by use of FAB is proposed. In the method, the mask with line-and -space is put on the substrate with slope. Changing the slope of the mask, it is possible to change the line-and-space on the substrate. Next, the manufacturing process of the mask to make a nano-meter-order line-and-space on the substrate by use of FAB etching machine is proposed. Moreover, the mask is manufactured by use of FAB and its performance of manufacturing is discussed.
