Abstract
Static strength tests and dynamic fatigue tests were conducted on polycrystalline silicon thin films and bulk single crystalline silicon. Statistical analysis was performed to integrate all the test results on the basis of equivalent initial crack length. The fatigue crack extension was represented by Paris's law with two parameters and the cumulative fracture probability was formulated as a function of the applied stress and the number of fatigue cycles. The influence of specimen shape and process damage on fatigue characteristics of silicon materials was investigated by the analysis.
