K-0835 Effect of the Resion of Singular Stress Field near the Interface Edge on Delamination Strength Property of Sub-micron Cu Films

Abstract

The delamination tests are conducted for multi-films, Cu/TiN, on a Si-substrate with different thickness of Cu (50nm, l00nm and 500nm), and the effect of stress-singular region on the strength at the Cu/TiN interface edge is examined. In the tests, the stress-singular region is about 5nm, 10nm, and 40nm, respectively. The critical stress intensity in the specimen with the thinner Cu is larger in the one with the thicker Cu. It is found that the delamination in all tests takes place when the stress at γ<100nm reaches about 18〜19MPa. This signifies that the region of γ<100nm characterize the interface toughness and the size is larger than the stress-singular region in the specimen.