K-1814 The Basic Investigation for the Heat Treatment of Silicon Wafers Arranged in a Row in Heating Furnace

Abstract

In the heat treatment of silicon wafer, temperature control of the wafer surface is very important. This paper investigates the rapid radiative heating characteristics of the silicon wafers arranged in a row in the vertical heating furnace by the experiment and the numerical simulation. In present test, a wafer pitch was changed from 54 mm to 216 mm. The results showed that the maximum difference of surface temperature decreased with increase of a pitch of the silicon wafer. The maximum temperature difference was about 5℃, when a wafer pitch was 108mm and ramp-up ratio was 150℃/min. Simulation and experimental result agreed very well.