Abstract
Crack tip dislocations in silicon single crystal were observed by high-voltage electron microscopy (HVEM). The crack tip area was selectively thinned by using an ion milling machine. Dislocation structures around the crack tip were elucidated from a tilt series of dislocation images, suggesting a dislocation growing process near the crack tip. Slip planes and Burgers vector of those dislocations were characterized in detail. In the present paper, self driven dislocation source multiplication process will be presented.
