Abstract
Electroplated copper thin films have started to be applied to thin film interconnections and TSV (Through Silicon Via) in semiconductor devices because of its low electric resistivity. However, both mechanical and electronic properties of electroplated copper films vary drastically depending on the electroplating conditions and thermal history. That is because the micro texture of the film is largely changed as a function of the electroplating conditions and the annealing temperature. In this study, the change of the crystallographic quality of the polycrystalline copper thin-film was observed by using an EBSD (Electron Back Scatter Diffraction) method. This EBSD analysis clearly showed that the degradation of the crystallinity of the electroplated copper thin film after the annealing was caused by stress-induced migration around the grain boundaries with low crystallinity.
