Abstract
The embedded strain gauges in a PQC-TEG in a silicon chip were applied to the measurement of the change of the residual stress in a transistor structure with a 50-nm wide gate during thin film processing. The change of the residual stress was successfully monitored through the process such as the deposition and etching of thin films. In addition, the sensors were also applied to measurement of thermal residual stress in a silicon wafer caused by flip-chip bonding and the stress was successfully monitored. The sensitivity of the measurement was 1 MPa and it was validated that the amplitude of the fluctuation exceeded 100 MPa. This technique has applicability to monitoring the residual stress from front-end wafer process to packaging process.
