Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : October 07, 2017 - October 09, 2017
Electronic package is made by bonding of different material such as semiconductor chip, resin and metal. When the force act on the surface of bonded structure, the stress concentration occurs near the interface edge. The region of the stress concentration and the point of the interface edge are referred to as the singular stress field and the singular point, respectively. It appears that the singular stress field or the singular point is one of cause of fracture of the bonded structure and affects the electrical characteristics of the circuit. Therefore, it is necessary to investigate the suitable structure by the stress analysis. Silicon used as semiconductor chip is orthotropic material. In this study, the relationship between the material properties of the orthotropic material and intensity of singularity is investigated. The purpose of this study is to investigate on the singular stress field for three dimensional orthotropic-isotropic bonded structure. The stress analysis is carried out based on the finite element method.
