Abstract
Semiconductor device dimensions has been dramatically decreased and those performance has been improved. Therefore, those reliabilities are very important. Micro-Raman spectroscopy is used to measure phase, stress and strain in semiconductor materials. The point scanning technique of conventional Raman spectroscopy is time-consuming for wide-field measurement. In this study, we developed wide field micro-Raman spectroscope equipped with integral field unit (IFU) to obtain two-dimensional phase maps. In the illumination optical system, the area of the laser spot is enlarged by a diffractive optical element (DOE). The other hand, the detection optical system has IFU comprised of microlens array, optical fiber bundle and 2D-imaging spectrometer equipped with highly sensitive charge-coupled device (CCD) detector. The IFU efficiently and simultaneously corrects two-dimensional Raman signal. By IFU, two-dimensional phase maps are obtained without scanning laser spots and stages at high speed. First, the phase mapping of phase-transformed Si after Vickers indentation were conducted using IFU with the optical fiber bundle (4x4-16x1). Second, we developed the new optical fiber bundle (10x10-100x1) in order to improve the spatial resolution of detection. By increasing the number of optical fibers from 16 to 100, the spatial resolution can be as high as that of conventional confocal Raman microscope. The performance of the developed optical fiber bundle was evaluated. High speed and high spatial resolution imaging system can be realized by developing optical fiber bundle for 100 points.
