Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : November 02, 2019 - November 04, 2019
In recent years, electronic devices have remarkably achieved miniaturization and high performance with the development of MEMS. In addition, the current density in the interconnect has risen due to the increase of electric energy accompanying the development of power devices. The delamination of thin film due to thermal stress and electromigration has become a problem. One method to improve the adhesion strength of thin film on a substrate is using an adhesion layer such as Cr or Ti between the thin film and the substrate. However, this method has the disadvantages that additional materials are required and the thickness of the interconnect increases. The adhesion strength of the thin film needs to be improved itself. This study proposed a method to apply high-density current with high frequency to thin film to improve the adhesion strength of it. The Au thin film (Size: 5 mm×45 mm×150 nm) was deposited on a glass substrate by radio frequency sputtering. Then, high-density current with high frequency was applied in thin film and the adhesion strength was measured by using peel test. As a result, the adhesion strength was improved by 20% or greater by applying high-density current with high frequency. Therefore, this method is expected to be a new strength improvement method for thin film.
