Abstract
Si (100) surface anisotropy etched in aqueous KOH exhibits the fractal characteristics. But the formation mechanism of the fractal structure of etched surface has not been made clear. Therefore, the simulation of the surface growth was carried out using Monte Carlo method, and the results were compared with the experimental data. The simulation demonstrated that the artificial surface roughness was similar to the etched Si surface roughness in its time, concentration and temperature-dependent fluctuations. This proves that the Si surface showing self-affine characteristics is formed by the selective dissolution of Si atoms and the selective stick of micro masks.
