Abstract
CMP is concerning with the planarization technology which is contributing to high integration and multilayer wiring of LSI, but the polishing mechanism made by polishing agent manufactured by the sol-gel method has not completely made clear yet. In this paper, the polishing characteristic were examined experimentally, and we tried to investigate the mechanical and chemical action of the polishing slurry, based on the results by CMP for the work materials BK-7 and Cu. When the slurry is alkaline, silica particles are observed to adhere, and to deposit on the surface of the work BK-7. The material removal mechanism for CMP of Cu is concluded to be the processing mechanism that abrasives adhere to the work surface and the work material is removed together with abrasives by polishing cloth in atomic size.
