Abstract
We found that Spin On Glass (SOG) material acts as positive-type electron beam resist, and fine line pattern was obtained using electron beam exposure and following buffered HF development. Thus, SOG is the candidate material for high aspect ratio and fine pattern mask to organic materials such as polymethylmethacrylate (PMMA) by synchrotron radiation (SR) exposure. In this report, etching of PMMA by SR using SOG mask was examined. The SR, which emitted rom BL6 at the New SUBARU in Himeji Institute of technology, exposed to PMMA thorough SOG mask with fire patterns at room temperature. As a result, SOG mask layer was etched 263nm by SR and PMMA was etched 355nm by SR. Therefore, SOG was effective mask for PMMA, and this process would be able to do LIGA process without development.
