Abstract
In this paper, the surface and subsurface of silicon wafers ground by different types of diamond wheels have been studied. It is found from the top that the subsurface of wafer consists of amorphous Si, followed by strained crystal with a large compressive residue stress, and then the bulk material in single crystal. In a severe condition which causes grinding burn, part of amorphous Si is re-crystallized to form a poly-crystal Si, and part of amorphous Si possibly reacts with oxygen to form SiO_2 Authors have proposed a new chemo-mechanical grinding (CMG) process for effective stress relief and damaged-layer removal.
