Abstract
Recently, the demand for electronic device, such as personal computer, increases rapidly. Therefore, polishing pad for achieving high removal rate has been strongly required in mass production of semiconductor and hard disk. Moreover, it is required to polish fragile material, such as low-k material, without damage. So, in order to meet these requirements, that is to polish in the low or high pressure and speed conditions, a structure-controlled polishing pad is developed. And, in previous report, high removal rate was achieved in high pressure condition by improved the surface condition of developed pad. In this study, the influence of contact condition between polishing pad and workpiece, which changes with relative speed between polishing pad and workpiece, is considered for evaluation of friction coefficient and removal rate. Then, the developed pad achieved high removal rate in wide range of pad rotational speed condition by improving the surface condition.
