Abstract
Silicon wafer is an important element of semiconductor devices and solar panels. Currently in the slicing process of solar panels, half of the ingot is wasted, while in the slicing process of semiconductor devices, 20% of the ingot is not used. In this study, we have attempted to replace mechanical processing with laser processing characterized by small processing area and virtually no mechanical swarf. In particular, we focused on the slicing process of silicon ingot and proposed the laser slicing technique of silicon wafer. In our previous report, we have successfully sliced an area of 10 mm squared of silicon wafer by the new laser slicing method. This paper reports on the speeding up of the laser slicing technique of silicon wafer with a larger slicing area and the relationship between sliced surface and peel stress was examined
