Abstract
This study aims at contributing to higher performance for manufacturing process of semiconductor by improving CMP technologies. Chemical Mechanical Planarization (CMP) is one of the most important process to get high performance and miniaturization for semiconductor. We use pad to polish silicon wafer as semiconductor substrate, but we need to polish surface of pad because the surface is going to get worse during the process. To polish pad, we use a gadget called diamond conditioner. We tried to clarify their best moving condition, less grinding resistance and better surface roughness, of pad and diamond conditioner by using CMP machine. We changed rotational speeds of pad and diamond conditioner and oscillation speed of conditioner. The result of the experiments, oscillation speed of conditioner is the primary factor in determining grinding resistance, and both rotational speeds don’t affect it so much. The most important moving condition of conditioner is conditioner’s oscillation speed. When it moves fast in the outer area of pad, its grinding resistance is small. However, too fast oscillation speed causes bad surface roughness.
