Abstract
We performed friction simulations of hydrogen terminated carbon nitride (H-CNX) using our first-principles molecular dynamics (FPMD) and tight-binding quantum chemical molecular dynamics (TB-QCMD) simulators. In FPMD simulation, H-CN_X showed low friction coefficient of 0.15 and 0.10 at 5 and 10 GPa, respectively. This is because terminated hydrogen atoms prevented the bond generation at the films interface. In TB-QCMD simulation, under 1 GPa, H-CN_X and H-DLC also showed low friction coefficients of 0.05 because terminated hydrogen atoms prevented the bond generation at the films interface. On the other hand, under 5 GPa, while H-CN_X showed a low friction coefficient of 0.07, a friction coefficient of H-DLC takes a high value of 0.42. Although C-C bonds were generated at the interface of H-DLC films under high pressure, nitrogen atoms of H-CN_X prevented C-C bond generation at the interface. We found that H-CN_X is more stable and shows lower friction than H-DLC under high pressure.
