Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : October 30, 2018 - November 01, 2018
We previously proposed and experimentally demonstrated a novel photo-patterning method, which is direct light etching of organic materials using vacuum ultraviolet light (VUV). It is however the detailed quantitative performance has not been evaluated yet. Thus, we evaluated the side etch performance of direct light etching using Cr thin layer as a photomask, which is directly deposited and patterned on an etching target of PMMA. As a result, this method showed almost no side etching, whereas vertical etching proceeded as increasing VUV irradiation. On the other hand, a conventional contact exposure, which used VUV transparent quartz substrate with Cr pattern as an etching mask, resulted in generation side etch in proportion to the irradiation. Therefore, we found that the direct light etching with VUV has a large possibility to realize high-resolve etching regardless of side etching if the etching mask contacted perfectly on a target substrate.
