Preparation of thick DLC film by plasma-based ion implantation and deposition

Abstract

The relaxation of compressive residual stress in a diamond-like carbon (DLC) film was achieved by a hybrid process of plasma-based ion implantation and deposition (PBIID), and made it possible to prepare tick DLC film. The compressive residual stress in the DLC film prepared using acetylene gas was decreased with an increase in the negative pulse voltage for ion implantation from 0.46 GPa at no pulsed voltage to 0.16 GPa at the pulsed voltage of -20 kV. The DLC film had about 0.22 GPa that was little dependent on the RF pulse width.