Abstract
The phase transformation of silicon occurs under relatively low pressure of mechanical testing and manufacturing. Especially, nonhydrostatic stress is reported to lower the phase transition pressure by previous experimental studies. In this study, we conducted calculations on the critical stress on the phase transformation of silicon under multiaxial nonhydrostatic stress. Atomistic simulation using simplified model was conducted to obtain ideal critical stress of the phase transformation of silicon. As results, the lowering of the require stress for the phase transformation of silicon was verified and a new stress criterion determining the phase transformation.
