Abstract
An electromagnetic property in a Ni-containing diamond-like carbon film was reported. The film was deposited onto polycrystalline silicon using chemical vapor deposition and the co-sputtering of a Nickel target. The temperature dependence on resistivity was measured in the temperature range of 80-400K. Ac resistance was measured by the four-terminal method. The electric conduction mechanism of these films obeys the hopping conduction model. The reluctance was measured under magnetic field of 0 to 50kOe applied to the normal direction of a test piece. The 0.8% magnetoresistance was observed at room temperature.
