We develop a numerical calculation method of crystal growth of InAs-GaAs by the Travelling Liquidus Zone (TLZ) method. We investigate the possibility of growing a uniform In_<0.3>Ga_<0.7>As binary compound semiconductor under microgravity conditions, forcusing on the crystal growth rate and supercooling . We find that the crystal growth rate coincides with the diffusion limited case under microgravity conditions. Supercooling is remarkably reduced by reducing the zone width.
