Abstract
It has been important to understand interfacial phenomena of semiconductor/metal thin-films, like Fermi level pinning, and control them for highly reliable ULSI. GaAs is known as a valuable material used for high-frequency devices, high-efficient light-emitting devices, and so on. In order to understand and control interfacial phenomena on GaAs/metal contacts, electrical properties of GaAs/metal? thin-films (Au, Pt, Cu, Al) contacts by RF magnetron sputtering have been studied by measuring I-V and 1/C2-V properties before and after annealing. The results showed that the slope of barrier heights φB toward to metal work functions χm was about 0.1; hence, Schttoky model is probably unsuitable and Bardeen model may be well for GaAs, a covalent bond semiconductor. In cases of ohmic properties, the alloy of GaAs and metals formed by annealing and increased impurity concentration at interfaces may contribute for changing the electrical properties into ohmic ones.
